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PDV-P8001

PDV-P8001

Active
Advanced Photonix

CDS PHOTORESIST 3K-11KOHM 5.10MM

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PDV-P8001

PDV-P8001

Active
Advanced Photonix

CDS PHOTORESIST 3K-11KOHM 5.10MM

Find alt

Description

General part information

PDV-P8001

CDS PHOTORESIST 3K-11KOHM 5.10MM

Technical Specifications

Parameters and characteristics for this part

SpecificationPDV-P8001
Cell Resistance (Maximum)11 kOhm
Cell Resistance (Min)200 kOhms
Cell Resistance (Minimum)3 kOhm
Fall Time (Typ)20 ms
Mounting TypeThrough Hole
Operating Temperature (Max)75 °C
Operating Temperature (Min)-30 °C
Package / CaseRadial
Rise Time (Typ)55 ms
Voltage - Max150 Vpk
Wavelength520 nm

Pricing

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CAD

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Documents

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