
UF4SC120030B7SSR
ActiveON Semiconductor
1200V/30MO,SICFET,G4,TO263-7

UF4SC120030B7SSR
ActiveON Semiconductor
1200V/30MO,SICFET,G4,TO263-7
Description
General part information
UF4SC120030B7SSR
1200V/30MO,SICFET,G4,TO263-7
Technical Specifications
Parameters and characteristics for this part
| Specification | UF4SC120030B7SSR |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 56 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 37.8 nC |
| Input Capacitance (Ciss) (Max) | 1450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK-7L, D2PAK |
| Power Dissipation (Max) | 341 W |
| Rds On (Max) | 39 mOhm |
| Technology | SiCFET (Cascode SiCJFET) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 6 V |
Pricing
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CAD
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Documents
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