Specification	SI1054X-T1-E3

Current - Continuous Drain (Id) (Ta)	1.32 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	8.57 nC, 8.57 nC
Input Capacitance (Ciss) (Max)	480 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SC-89 (SOT-563F)
Power Dissipation (Max)	236 mW
Rds On (Max)	95 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

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