Description
General part information
ISC031N08NM6SCATMA1
OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on)and ~40% improved FOMQgx RDS(on)in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC031N08NM6SCATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 21 A |
| Current - Continuous Drain (Id) (Tc) | 145 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 44 nC, 44 nC |
| Input Capacitance (Ciss) (Max) | 3100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Name | PG-WSON-8-2 |
| Power Dissipation (Max) | 150 W, 3 W |
| Rds On (Max) | 3.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
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