2SK3906(Q)
ObsoleteToshiba Semiconductor and Storage
MOSFET N-CH 600V 20A TO3P
2SK3906(Q)
ObsoleteToshiba Semiconductor and Storage
MOSFET N-CH 600V 20A TO3P
Description
General part information
2SK3906(Q)
MOSFET N-CH 600V 20A TO3P
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SK3906(Q) |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 60 nC |
| Input Capacitance (Ciss) (Max) | 4250 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3P-3, SC-65-3 |
| Package Name | TO-3P(N) |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) | 330 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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