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SISA26DN-T1-GE3

SISA26DN-T1-GE3

Active
Vishay Dale

MOSFET N-CH 25V 60A PPAK1212-8S

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SISA26DN-T1-GE3

SISA26DN-T1-GE3

Active
Vishay Dale

MOSFET N-CH 25V 60A PPAK1212-8S

Find alt

Description

General part information

SISA26DN-T1-GE3

MOSFET N-CH 25V 60A PPAK1212-8S

Technical Specifications

Parameters and characteristics for this part

SpecificationSISA26DN-T1-GE3
Current - Continuous Drain (Id) (Tc)60 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)44 nC, 44 nC
Input Capacitance (Ciss) (Max)2247 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® 1212-8
Package NamePowerPAK® 1212-8
Power Dissipation (Max)39 W
Rds On (Max)2.65 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max) Negative-12 V
Vgs (Max) Positive16 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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