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Description

General part information

HUF76443S3ST

N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationHUF76443S3ST
Current - Continuous Drain (Id) (Tc)75 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)129 nC
Input Capacitance (Ciss) (Max)4115 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)260 W
Rds On (Max)8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)3 V

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