Specification	G630J

Current - Continuous Drain (Id) (Tc)	11 A, 9 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	515 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	TO-251
Power Dissipation (Max)	83 W
Rds On (Max)	0.28 Ohm, 250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

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