IRFI540NPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 20 A, 0.052 OHM, TO-220FP, THROUGH HOLE

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IRFI540NPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 20 A, 0.052 OHM, TO-220FP, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFI540NPBF

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	54 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	TO-220AB Full-Pak
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFI540 Series

Part	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Infineon Technologies IRFI540NPBF	N-Channel	20 V	10 V	1400 pF	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-220-3 Full Pack	100 V	20 A	Through Hole	52 mOhm	54 W	4 V	94 nC	TO-220AB Full-Pak

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.66
		10	$ 0.86
		100	$ 0.78
		500	$ 0.67
		1000	$ 0.59
		4000	$ 0.59
Digikey	Tube	1	$ 2.14
		10	$ 1.37
		100	$ 0.93
		500	$ 0.74
		1000	$ 0.68
		2000	$ 0.63
		5000	$ 0.60
Newark	Each	1	$ 2.12
		10	$ 1.65
		100	$ 1.16
		500	$ 1.07
		1000	$ 1.03
		4000	$ 0.98
		10000	$ 0.95

Description

General part information

IRFI540 Series

The IRFI540NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.

Documents

Technical documentation and resources