TN0604N3-G-P013
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 40V, 0.75 OHM
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TN0604N3-G-P013
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 40V, 0.75 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN0604N3-G-P013 | TN0604 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 700 mA |
| Drain to Source Voltage (Vdss) | - | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 5 V |
| FET Type | - | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - | 190 pF |
| Mounting Type | - | Through Hole |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | - | 740 mW |
| Rds On (Max) @ Id, Vgs | - | 750 mOhm |
| Supplier Device Package | - | TO-92-3 |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs(th) (Max) @ Id | - | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Box (TB) | 2000 | $ 1.14 | |
| Microchip Direct | AMMO | 1 | $ 1.52 | |
| 25 | $ 1.27 | |||
| 100 | $ 1.14 | |||
| 1000 | $ 0.97 | |||
| 5000 | $ 0.89 | |||
| 10000 | $ 0.81 | |||
TN0604 Series
MOSFET, N-Channel Enhancement-Mode, 40V, 0.75 Ohm
| Part | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Vgs (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN0604N3-G | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 190 pF | 40 V | 10 V | 5 V | TO-92-3 | 20 V | 1.6 V | 700 mA | 740 mW | 750 mOhm | TO-226-3, TO-92-3 | Through Hole |
Microchip Technology TN0604N3-G-P005 | ||||||||||||||||
Microchip Technology TN0604N3-G-P013 | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 190 pF | 40 V | 10 V | 5 V | TO-92-3 | 20 V | 1.6 V | 700 mA | 740 mW | 750 mOhm | TO-226-3, TO-92-3 | Through Hole |
Microchip Technology TN0604N3-G-P013 |
Description
General part information
TN0604 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources