Specification	IRF7526D1TR

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	180 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.118 in
Package Name	Micro8™, 8-TSSOP, 8-MSOP
Package Width	3 mm
Power Dissipation (Max)	1.25 W
Rds On (Max)	200 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1 V

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