Description
General part information
ISP670P06NMAXTSA1
ISP670P06NMA features a low RDS(on)of 0.167 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive application. The main advantage of a P-channel device is the reduction of design complexity and simple interface. In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISP670P06NMAXTSA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3.7 A |
| Current - Continuous Drain (Id) (Tc) | 6.4 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 48 nC, 48 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | PG-SOT223-4-21 |
| Power Dissipation (Max) | 5 W, 1.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 67 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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