BYM12-200HE3_B/H
ActiveVishay General Semiconductor - Diodes Division
DIODE STANDARD 200V 1A DO213AB
BYM12-200HE3_B/H
ActiveVishay General Semiconductor - Diodes Division
DIODE STANDARD 200V 1A DO213AB
Description
General part information
BYM12-200HE3_B/H
DIODE STANDARD 200V 1A DO213AB
Technical Specifications
Parameters and characteristics for this part
| Specification | BYM12-200HE3_B/H |
|---|---|
| Capacitance | 20 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage | 5 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | DO-213AB, MELF (Glass) |
| Package Name | DO-213AB |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 50 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 1 V, 1 V |
Pricing
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CAD
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Documents
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