Description
General part information
SPP11N60C3XKSA1
MOSFET, N-CH, 600V, 11A, TO-220-3
Technical Specifications
Parameters and characteristics for this part
| Specification | SPP11N60C3XKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 11 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 60 nC |
| Input Capacitance (Ciss) (Max) | 1200 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | PG-TO220-3-1 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) | 380 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.9 V |
Pricing
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CAD
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