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Infineon Technologies AG-IPC302N15N3X1SA1 MOSFETs Trans MOSFET N-CH 150V 3-Pin Die Wafer

IPC302N15N3X1SA1

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INFINEON

OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES

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Infineon Technologies AG-IPC302N15N3X1SA1 MOSFETs Trans MOSFET N-CH 150V 3-Pin Die Wafer

IPC302N15N3X1SA1

Active
INFINEON

OPTIMOS™ AND STRONGIRFET™ LOW AND MEDIUM VOLTAGE POWER MOSFET BARE DIES

Find alt

Description

General part information

IPC302N15N3X1SA1

Infineon’s OptiMOS™ 100V, 120V and 150V families combine very low on-state resistance (RDS(on)) and fastest switching behavior, providing outstanding performance to a wide range of industrial and consumer applications. From high current motor control applications to fast switching DC-DC converters or Class D audio amplifiers, Infineon’s products offer excellent performance, the highest efficiency and minimal space requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPC302N15N3X1SA1
Current - Continuous Drain (Id) (Tj)1 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Mounting TypeSurface Mount
Package / CaseDie
Package NameSawn on foil
Rds On (Max)100 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)4 V

Pricing

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CAD

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