Description
General part information
IDD09SG60CXTMA2
DIODE SIL CARB 600V 9A PGTO2523
Technical Specifications
Parameters and characteristics for this part
| Specification | IDD09SG60CXTMA2 |
|---|---|
| Capacitance | 280 pF |
| Current - Average Rectified (Io) | 9 A |
| Current - Reverse Leakage | 80 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 2.1 V |
Pricing
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CAD
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Documents
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