Specification	TT8M3TR

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	2.4 A
Current - Continuous Drain (Id) (Typical)	2.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	1.5 V
Gate Charge (Max)	3.6 nC
Input Capacitance (Ciss) (Max)	260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 8-SMD
Package Name	8-TSST
Power - Max	1 VA
Rds On (Max)	72 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

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