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G7K2N20HE

G7K2N20HE

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Goford Semiconductor

MOSFET N-CH ESD 200V 2A SOT-223

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G7K2N20HE

G7K2N20HE

Active
Goford Semiconductor

MOSFET N-CH ESD 200V 2A SOT-223

Find alt

Description

General part information

G7K2N20HE

MOSFET N-CH ESD 200V 2A SOT-223

Technical Specifications

Parameters and characteristics for this part

SpecificationG7K2N20HE
Current - Continuous Drain (Id) (Tc)2 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)10.8 nC
Input Capacitance (Ciss) (Max)568 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223
Power Dissipation (Max)1.8 W
Rds On (Max)700 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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