Specification	TP65H100G4LSGB-TR

Current - Continuous Drain (Id) (Tc)	18.9 A, 18.9 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14.4 nC
Input Capacitance (Ciss) (Max)	818 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-VDFN Exposed Pad
Package Length	8 mm
Package Name	8-PQFN
Package Width	8 mm
Power Dissipation (Max)	65.8 W
Rds On (Max)	110 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	20 V
Vgs(th) (Max)	4.1 V

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