Specification	C3M0120100J-TR

Current - Continuous Drain (Id) (Tc)	22 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	414 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	D2PAK-7, D2PAK
Power Dissipation (Max)	83 W
Rds On (Max)	155 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	15 V
Vgs(th) (Max)	3.5 V

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