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IPS60R280PFD7SAKMA1

IPS60R280PFD7SAKMA1

Obsolete
INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 280 MOHM; PRICE/PERFORMANCE

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IPS60R280PFD7SAKMA1

IPS60R280PFD7SAKMA1

Obsolete
INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 280 MOHM; PRICE/PERFORMANCE

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Description

General part information

IPS60R280PFD7SAKMA1

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPS60R280PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPS60R280PFD7S in a TO-251 IPAK SL package features RDS(on)of 280mOhms resulting in low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced BOM for the customer. This product family is tailored to ultra-high power density as well as highest efficiency designs. The products primarily address ultra-high density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPS60R280PFD7SAKMA1
Current - Continuous Drain (Id) (Tc)12 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)15.3 nC
Input Capacitance (Ciss) (Max)656 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NamePG-TO251-3
Power Dissipation (Max)51 W
Rds On (Max)280 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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