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MJB5742T4G

MJB5742T4G

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ON Semiconductor

8.0 A, 400 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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MJB5742T4G

MJB5742T4G

Active
ON Semiconductor

8.0 A, 400 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

Find alt

Description

General part information

MJB5742 Series

The MJB5742 Darlington transistor was designed for high voltage power switching in inductive circuits.

Technical Specifications

Parameters and characteristics for this part

SpecificationMJB5742T4G
Current - Collector (Ic) (Max)8 A
DC Current Gain (hFE) (Min)200
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameD2PAK
Power - Max100 VA
Transistor TypeNPN, Darlington
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

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CAD

3D models and CAD resources for this part