Description
General part information
IQE220N15NM5CGSCATMA1
The IQE220N15NM5CGSC is part of the Source-Down family with an RDS(on)of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than to the overmolded package. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).
Technical Specifications
Parameters and characteristics for this part
| Specification | IQE220N15NM5CGSCATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 7 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 18 nC |
| Input Capacitance (Ciss) (Max) | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 9-PowerWDFN |
| Package Name | PG-WHTFN-9 |
| Power Dissipation (Max) | 2.5 W, 100 W |
| Rds On (Max) | 22 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.6 V |
Pricing
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