Description
General part information
BSC120N12LSGATMA1
OptiMOS™ 3 power MOSFETs in logic level are highly suitable forcharging,adapterandtelecomapplications. The devices' low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC120N12LSGATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Current - Continuous Drain (Id) (Tc) | 68 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 51 nC |
| Input Capacitance (Ciss) (Max) | 4900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8 |
| Power Dissipation (Max) | 114 W |
| Rds On (Max) | 12 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.4 V |
Pricing
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