Description
General part information
IPL65R420E6AUMA1
MOSFET N-CH 650V 10.1A THIN-PAK
Technical Specifications
Parameters and characteristics for this part
| Specification | IPL65R420E6AUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10.1 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 39 nC |
| Input Capacitance (Ciss) (Max) | 710 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 4-PowerTSFN |
| Package Name | PG-VSON-4 |
| Power Dissipation (Max) | 83 W |
| Rds On (Max) | 420 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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