GBJ25M
ActiveGeneSiC Semiconductor
BRIDGE RECT 1PHASE 1KV 25A GBJ
GBJ25M
ActiveGeneSiC Semiconductor
BRIDGE RECT 1PHASE 1KV 25A GBJ
Description
General part information
GBJ25M
BRIDGE RECT 1PHASE 1KV 25A GBJ
Technical Specifications
Parameters and characteristics for this part
| Specification | GBJ25M |
|---|---|
| Current - Average Rectified (Io) | 25 A |
| Current - Reverse Leakage | 10 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | GBJ, 4-SIP |
| Package Name | GBJ |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) | 1.05 V |
| Voltage - Peak Reverse (Max) | 1000 V |
Pricing
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CAD
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Documents
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