Description
General part information
S29GL064 Series
S29GL064S70BHI030 is a S29GL064S MIRRORBIT™ 64Mb page-mode flash memory IC can be programmed either in the host system or in standard EPROM programmers. It requires only a single 3.0V power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature is supported through increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate system production. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.
Technical Specifications
Parameters and characteristics for this part
| Specification | S29GL064S70BHI030 |
|---|---|
| Access Time | 70 ns |
| Memory Depth (Option 1) | 8 M |
| Memory Depth (Option 2) | 4 M |
| Memory Format | FLASH |
| Memory Interface (Type) | Parallel |
| Memory Organization | 4M x 16, 8M x 8 |
| Memory Size | 64 Mbit |
| Memory Type | Non-Volatile |
| Memory Width (Option 1) | 8 bit |
| Memory Width (Option 2) | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 48-VFBGA |
| Package Length | 8.15 mm |
| Package Name | 48-FBGA |
| Package Width | 6.15 mm |
| Technology | FLASH - NOR |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 2.7 V |
| Write Cycle Time - Page | 60 ns |
| Write Cycle Time - Word | 60 ns |
Pricing
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