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S29GL064S70BHI030

S29GL064S70BHI030

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INFINEON

FLASH MEMORY, PARALLEL NOR, 64 MBIT, 8M X 8BIT, CFI, PARALLEL, BGA, 48 PINS

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S29GL064S70BHI030

S29GL064S70BHI030

Active
INFINEON

FLASH MEMORY, PARALLEL NOR, 64 MBIT, 8M X 8BIT, CFI, PARALLEL, BGA, 48 PINS

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Description

General part information

S29GL064 Series

S29GL064S70BHI030 is a S29GL064S MIRRORBIT™ 64Mb page-mode flash memory IC can be programmed either in the host system or in standard EPROM programmers. It requires only a single 3.0V power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature is supported through increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate system production. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Technical Specifications

Parameters and characteristics for this part

SpecificationS29GL064S70BHI030
Access Time70 ns
Memory Depth (Option 1)8 M
Memory Depth (Option 2)4 M
Memory FormatFLASH
Memory Interface (Type)Parallel
Memory Organization4M x 16, 8M x 8
Memory Size64 Mbit
Memory TypeNon-Volatile
Memory Width (Option 1)8 bit
Memory Width (Option 2)16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case48-VFBGA
Package Length8.15 mm
Package Name48-FBGA
Package Width6.15 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page60 ns
Write Cycle Time - Word60 ns

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