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Description

General part information

WAS110M12BM2

MOSFET 2N-CH 1200V 183A

Technical Specifications

Parameters and characteristics for this part

SpecificationWAS110M12BM2
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id) (Tc)183 A
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Max)322 nC
Input Capacitance (Ciss) (Max)6200 pF
Mounting TypeChassis Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseModule
Power - Max (Tc)723 W
Rds On (Max)17 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)4 V

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