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TC429EPA - PDIP / 8

TC429EPA

Active
Microchip Technology

IC,SINGLE MOSFET DRIVER,CMOS,DIP,8PIN,PLASTIC ROHS COMPLIANT: YES

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TC429EPA - PDIP / 8

TC429EPA

Active
Microchip Technology

IC,SINGLE MOSFET DRIVER,CMOS,DIP,8PIN,PLASTIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTC429EPATC429 Series
Channel Type-Single
Current - Peak Output (Source, Sink)-6 A
Current - Peak Output (Source, Sink)-6 A
Driven Configuration-Low-Side
Gate Type-N-Channel, P-Channel MOSFET
Input Type-Inverting
Mounting Type-Through Hole, Surface Mount
null-
Number of Drivers-1
Operating Temperature--55 - 0 °C
Operating Temperature-150 °C
Package / Case-0.3 in
Package / Case-8-DIP, 8-SOIC, 8-CDIP
Package / Case-7.62 mm
Package / Case-3.9 mm
Package / Case-0.154 in
Rise / Fall Time (Typ)-25 ns
Rise / Fall Time (Typ)-23 ns
Supplier Device Package-8-PDIP, 8-SOIC, 8-CERDIP
Voltage - Supply-18 V
Voltage - Supply-7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.38
25$ 2.00
100$ 1.81
Microchip DirectTUBE 1$ 2.38
25$ 2.00
100$ 1.81
1000$ 1.51
5000$ 1.38
10000$ 1.29
NewarkEach 100$ 1.87

TC429 Series

6 A MOSFET Gate Driver

PartChannel TypeVoltage - Supply [Max]Voltage - Supply [Min]Gate TypeDriven ConfigurationPackage / CasePackage / CasePackage / CaseSupplier Device PackageRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Mounting TypeInput TypeCurrent - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Operating Temperature [Min]Operating Temperature [Max]Number of DriversPackage / Case [y]Package / Case [x]
Microchip Technology
TC429CPA
Single
18 V
7 V
N-Channel, P-Channel MOSFET
Low-Side
0.3 in
8-DIP
7.62 mm
8-PDIP
25 ns
23 ns
Through Hole
Inverting
6 A
6 A
0 °C
150 °C
1
Microchip Technology
TC429EPA
Microchip Technology
TC429EOA
Single
18 V
7 V
N-Channel, P-Channel MOSFET
Low-Side
8-SOIC
8-SOIC
25 ns
23 ns
Surface Mount
Inverting
6 A
6 A
-40 °C
150 °C
1
3.9 mm
0.154 in
Microchip Technology
TC429EPA
Single
18 V
7 V
N-Channel, P-Channel MOSFET
Low-Side
0.3 in
8-DIP
7.62 mm
8-PDIP
25 ns
23 ns
Through Hole
Inverting
6 A
6 A
-40 °C
150 °C
1
Microchip Technology
TC429EOA
Microchip Technology
TC429MJA
Single
18 V
7 V
N-Channel, P-Channel MOSFET
Low-Side
0.3 in
8-CDIP
7.62 mm
8-CERDIP
25 ns
23 ns
Through Hole
Inverting
6 A
6 A
-55 °C
150 °C
1
Microchip Technology
TC429EOA713
Single
18 V
7 V
N-Channel, P-Channel MOSFET
Low-Side
8-SOIC
8-SOIC
25 ns
23 ns
Surface Mount
Inverting
6 A
6 A
-40 °C
150 °C
1
3.9 mm
0.154 in
Microchip Technology
TC429EOA713
Microchip Technology
TC429CPA
Microchip Technology
TC429EPA

Description

General part information

TC429 Series

The TC429 is a high-speed, single output, CMOS-level translator and gate driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5 Ω output impedance and 6 A peak output current drive. This device can typically switch a 2,500 pF capacitive load in 25 ns, with a typical delay time through the device of 60 ns. Rapidly switching the load will minimize MOSFET transition power loss. The device will accept TTL and CMOS input logic voltages, or any voltage input up to 18 V without damage, producing an output signal which will swing within 25 mV of the power rails. Logic input current is under 10 µA, making direct interface to CMOS/bipolar switch-mode power supply controllers easy, input "speed-up" capacitors are not required, and the CMOS design minimizes quiescent power supply current requirements. For noninverting applications, or applications requiring latch-up protection, see the MCP1406/7 data sheet.