SUM75N06-09L-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 90A D2PAK

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 90A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SUM75N06-09L-E3

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs	9.3 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SUM75N06-09L-E3	N-Channel	75 nC	TO-263 (D2PAK)	3 V	60 V	MOSFET (Metal Oxide)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	9.3 mOhm	90 A	2400 pF
Vishay General Semiconductor - Diodes Division SUM75N15-18P-E3	N-Channel	100 nC	TO-263 (D2PAK)	4.5 V	150 V	MOSFET (Metal Oxide)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		75 A		20 V	10 V	3.12 W 312.5 W	-55 °C	150 °C	18 mOhm	4180 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 90A (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available