BY25FQM512ESWIG(R)
ActiveBYTe Semiconductor
511 MBIT, 3.0V (2.7V TO 3.6V), -
BY25FQM512ESWIG(R)
ActiveBYTe Semiconductor
511 MBIT, 3.0V (2.7V TO 3.6V), -
Description
General part information
BY25FQM512ESWIG(R)
511 MBIT, 3.0V (2.7V TO 3.6V), -
Technical Specifications
Parameters and characteristics for this part
| Specification | BY25FQM512ESWIG(R) |
|---|---|
| Access Time | 5 ns |
| Clock Frequency | 166 MHz |
| Memory Depth | 64 M |
| Memory Format | FLASH |
| Memory Interface (Type) | SPI - Quad I/O, QPI, DTR |
| Memory Size | 512 Mb |
| Memory Type | Non-Volatile |
| Memory Width | 8 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Package Length | 5 mm |
| Package Name | 8-WSON |
| Package Width | 6 mm |
| Technology | FLASH - NOR |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 2.7 V |
| Write Cycle Time - Page | 2.4 ms |
| Write Cycle Time - Word | 100 µs |
Pricing
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CAD
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Documents
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