Specification	IRF5806

Current - Continuous Drain (Id) (Ta)	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	11.4 nC
Input Capacitance (Ciss) (Max)	594 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	Micro6™(TSOP-6)
Power Dissipation (Max)	2 W
Rds On (Max)	86 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.2 V

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