
SIAA02DJ-T1-GE3
ActiveVishay Dale
MOSFET N-CH 20V 22A/52A PPAK

SIAA02DJ-T1-GE3
ActiveVishay Dale
MOSFET N-CH 20V 22A/52A PPAK
Description
General part information
SIAA02DJ-T1-GE3
MOSFET N-CH 20V 22A/52A PPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | SIAA02DJ-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 22 A |
| Current - Continuous Drain (Id) (Tc) | 52 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 33 nC |
| Input Capacitance (Ciss) (Max) | 1250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® SC-70-6 |
| Package Name | PowerPAK® SC-70-6 |
| Power Dissipation (Max) | 3.5 W, 19 W |
| Rds On (Max) | 4.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 12 V |
| Vgs(th) (Max) | 1.6 V |
Pricing
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CAD
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Documents
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