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SIAA02DJ-T1-GE3

SIAA02DJ-T1-GE3

Active
Vishay Dale

MOSFET N-CH 20V 22A/52A PPAK

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SIAA02DJ-T1-GE3

SIAA02DJ-T1-GE3

Active
Vishay Dale

MOSFET N-CH 20V 22A/52A PPAK

Find alt

Description

General part information

SIAA02DJ-T1-GE3

MOSFET N-CH 20V 22A/52A PPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationSIAA02DJ-T1-GE3
Current - Continuous Drain (Id) (Ta)22 A
Current - Continuous Drain (Id) (Tc)52 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)33 nC
Input Capacitance (Ciss) (Max)1250 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SC-70-6
Package NamePowerPAK® SC-70-6
Power Dissipation (Max)3.5 W, 19 W
Rds On (Max)4.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max) Negative-8 V
Vgs (Max) Positive12 V
Vgs(th) (Max)1.6 V

Pricing

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CAD

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Documents

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