Description
General part information
IAUC120N06S5L011ATMA1
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, Qgand Gate capacitance and minimizing conduction and switching losses
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUC120N06S5L011ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 310 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 160 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 11400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-53 |
| Power Dissipation (Max) | 188 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
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