Description
General part information
BFR106E6327HTSA1
NPN Silicon RF Transistor
Technical Specifications
Parameters and characteristics for this part
| Specification | BFR106E6327HTSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 210 mA |
| DC Current Gain (hFE) (Min) | 70 |
| Frequency - Transition | 5 GHz |
| Gain (Max) | 13 dB |
| Gain (Min) | 8.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure (Typical) Maximum | 3 dB |
| Noise Figure (Typical) Minimum | 1.8 dB |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | PG-SOT23 |
| Power - Max | 700 mW |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
Pricing
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