DMMT5551-7-F

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Diodes Inc

BIPOLAR TRANSISTOR ARRAY, DUAL NPN, 160 V, 200 MA, 300 MW

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Diodes Inc

BIPOLAR TRANSISTOR ARRAY, DUAL NPN, 160 V, 200 MA, 300 MW

Technical Specifications

Parameters and characteristics for this part

Specification	DMMT5551-7-F

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	300 mW
Supplier Device Package	SOT-26
Transistor Type	2 NPN (Dual) Matched Pair
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

Dual NPN, 160V, 0.2A, SOT26

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Diodes Inc DMMT5551-7-F	-55 °C	150 °C	160 V	50 nA	300 mW	200 mA	300 MHz	200 mV	SOT-26	2 NPN (Dual) Matched Pair	SOT-23-6	Surface Mount	80

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Dual NPN, 160V, 0.2A, SOT26

Technical documentation and resources