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XP10TN028YT

XP10TN028YT

Active
YAGEO

MOSFET N-CH 100V 7.5A PMPAK

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XP10TN028YT

XP10TN028YT

Active
YAGEO

MOSFET N-CH 100V 7.5A PMPAK

Find alt

Description

General part information

XP10TN028YT

MOSFET N-CH 100V 7.5A PMPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationXP10TN028YT
Current - Continuous Drain (Id) (Ta)7.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)23 nC
Input Capacitance (Ciss) (Max)2160 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN, 8-PowerDFN
Package Length3 mm
Package NamePMPAK®
Package Width3 mm
Power Dissipation (Max)3.125 W
Rds On (Max)28 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

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