VS-36MT120
ActiveVishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.2KV 35A D-63
VS-36MT120
ActiveVishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.2KV 35A D-63
Description
General part information
VS-36MT120
BRIDGE RECT 3P 1.2KV 35A D-63
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-36MT120 |
|---|---|
| Current - Average Rectified (Io) | 35 A |
| Current - Reverse Leakage | 10 µA |
| Diode Type | Three Phase |
| Mounting Type | QC Terminal |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D-63, 5-Square |
| Package Name | D-63 |
| Technology | Standard |
| Voltage - Peak Reverse (Max) | 1200 V |
Pricing
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CAD
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