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G3F135MT12J-TR

G3F135MT12J-TR

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GeneSiC Semiconductor

1200V 135M TO-263-7 G3F SIC MOSF

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G3F135MT12J-TR

G3F135MT12J-TR

Active
GeneSiC Semiconductor

1200V 135M TO-263-7 G3F SIC MOSF

Find alt

Description

General part information

G3F135MT12J-TR

1200V 135M TO-263-7 G3F SIC MOSF

Technical Specifications

Parameters and characteristics for this part

SpecificationG3F135MT12J-TR
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)27 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)575 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads7 Leads
Package NameTO-263-7, D2PAK
Power Dissipation (Max)87 W
QualificationAEC-Q101
Rds On (Max)180 mOhm
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) Negative-10 V
Vgs (Max) Positive22 V
Vgs(th) (Max)4.3 V

Pricing

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CAD

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Documents

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