IRFS7434TRLPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 1.6 MOHM;

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 1.6 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS7434TRLPBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	324 nC
Input Capacitance (Ciss) (Max) @ Vds	10820 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	294 W
Rds On (Max) @ Id, Vgs [Max]	1.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Infineon Technologies IRFS7434TRLPBF	MOSFET (Metal Oxide)	324 nC	20 V	Surface Mount	6 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.6 mOhm	10820 pF	294 W	D2PAK	-55 °C	175 ░C	N-Channel	195 A	3.9 V	40 V

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