SUP60N10-18P-E3

Obsolete

Vishay Siliconix

MOSFET N-CH 100V 60A TO220AB

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Obsolete

Vishay Siliconix

MOSFET N-CH 100V 60A TO220AB

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	SUP60N10-18P-E3	SUP60 Series

Current - Continuous Drain (Id) @ 25°C	60 A	60 A
Drain to Source Voltage (Vdss)	100 V	20 - 100 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V	4.5 - 10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	50 - 55 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC	75 - 110 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF	1970 - 5950 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	175 ░C	150 - 175 ░C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-220-3	TO-220-3
Power Dissipation (Max)	3.75 W, 150 W	3.25 - 150 W
Rds On (Max) @ Id, Vgs	18.3 mOhm	4.5 - 18.3 mOhm
Rds On (Max) @ Id, Vgs	-	12 mOhm
Supplier Device Package	TO-220AB	TO-220AB
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	4.5 V	3 - 4.5 V

MOSFET N-CH 100V 60A TO220AB

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Vishay Siliconix SUP60N10-18P-E3	TO-220AB	4.5 V	MOSFET (Metal Oxide)	8 V, 10 V	18.3 mOhm	Through Hole	-55 °C	175 ░C	N-Channel	100 V	2600 pF	3.75 W, 150 W	60 A	20 V	TO-220-3	75 nC
Vishay Siliconix SUP60N02-4M5P-E3	TO-220AB	3 V	MOSFET (Metal Oxide)	4.5 V, 10 V	4.5 mOhm	Through Hole	-55 °C	175 ░C	N-Channel	20 V	5950 pF	3.75 W, 120 W	60 A	20 V	TO-220-3		50 nC
Vishay Siliconix SUP60N06-12P-E3	TO-220AB	4.5 V	MOSFET (Metal Oxide)	10 V		Through Hole	-55 °C	150 °C	N-Channel	60 V	1970 pF	3.25 W, 100 W	60 A	20 V	TO-220-3		55 nC	12 mOhm
Vishay Siliconix SUP60N06-12P-GE3	TO-220AB	4.5 V	MOSFET (Metal Oxide)	10 V		Through Hole	-55 °C	150 °C	N-Channel	60 V	1970 pF	3.25 W, 100 W	60 A	20 V	TO-220-3		55 nC	12 mOhm
Vishay Siliconix SUP60N10-16L-E3	TO-220AB	3 V	MOSFET (Metal Oxide)	4.5 V, 10 V	16 mOhm	Through Hole	-55 °C	175 ░C	N-Channel	100 V	3820 pF	150 W	60 A	20 V	TO-220-3	110 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 60A (Tc) 3.75W (Ta), 150W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available