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IGD70R140D2SAUMA1

IGD70R140D2SAUMA1

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INFINEON

HV GAN DISCRETES

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IGD70R140D2SAUMA1

IGD70R140D2SAUMA1

Active
INFINEON

HV GAN DISCRETES

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Description

General part information

IGD70R140D2SAUMA1

HV GAN DISCRETES

Technical Specifications

Parameters and characteristics for this part

SpecificationIGD70R140D2SAUMA1
Current - Continuous Drain (Id) (Tc)10 A
Drain to Source Voltage (Vdss)700 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max)133 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3-U03
Power Dissipation (Max)29 W
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)-10 V
Vgs(th) (Max)1.6 V

Pricing

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