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Description

General part information

2SK2221-E

MOSFET N-CH 200V 8A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification2SK2221-E
Current - Continuous Drain (Id) (Ta)8 A
Drain to Source Voltage (Vdss)200 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max)600 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-3P-3, SC-65-3
Package NameTO-3P
Power Dissipation (Max)100 W
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

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