IRFSL3006PBF

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 2.5 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 2.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL3006PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	8970 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Mounting Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IRFSL3006PBF	TO-262	2.5 mOhm	20 V	N-Channel	Through Hole	375 W	60 V	-55 °C	175 ░C	4 V	195 A	MOSFET (Metal Oxide)	10 V	I2PAK TO-262-3 Long Leads TO-262AA	8970 pF	300 nC

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