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ONSEMI MMBZ18VALT1G.

MMUN2238LT1G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE NPN, 50 V, 100 MA, 2.2 KOHM

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ONSEMI MMBZ18VALT1G.

MMUN2238LT1G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, SINGLE NPN, 50 V, 100 MA, 2.2 KOHM

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Description

General part information

MMUN2238LT1G

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Technical Specifications

Parameters and characteristics for this part

SpecificationMMUN2238LT1G
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)160
Mounting TypeSurface Mount
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power - Max246 mW
Resistor - Base (R1) Resistance2.2 kOhm
Transistor TypePre-Biased, NPN
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

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