1N4153 TR

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 75V 150MA DO35

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 75V 150MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N4153 TR

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	50 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If	880 mV

DIODE GEN PURP 75V 150MA DO35

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Speed	Speed	Capacitance @ Vr, F	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	Mounting Type
Central Semiconductor Corp 1N4153 TR	880 mV	50 nA	200 C	-65 C	150 mA	Standard	Any Speed	200 mA	2 pF	DO-35	75 V	4 ns	Axial, DO-204AH, DO-35	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 75 V 150mA Through Hole DO-35

Technical documentation and resources

No documents available