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DMN10H220LPDW-13 - PowerDI5060-8

DMN10H220LPDW-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 100V 8A 8-PIN POWERDI T/R

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Search across all available documentation for this part.

DocumentsDatasheetRecommended Soldering Techniques+1
DMN10H220LPDW-13 - PowerDI5060-8

DMN10H220LPDW-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 100V 8A 8-PIN POWERDI T/R

Deep-Dive with AI

DocumentsDatasheetRecommended Soldering Techniques+1

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN10H220LPDW-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs6.7 nC
Input Capacitance (Ciss) (Max) @ Vds384 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max [Max]2.2 W
Rds On (Max) @ Id, Vgs222 mOhm
Supplier Device PackagePowerDI5060-8 (Type R)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

DMN10H220LFDF Series

100V N-Channel Enhancement Mode MOSFET

PartVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsConfigurationPower - Max [Max]Drain to Source Voltage (Vdss)Operating Temperature [Min]Operating Temperature [Max]TechnologySupplier Device PackageMounting TypePackage / CaseCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, Vgs [Max]Drive Voltage (Max Rds On, Min Rds On)FET TypeVgs (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc
DMN10H220LPDW-13
2.5 V
6.7 nC
2 N-Channel (Dual)
2.2 W
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
PowerDI5060-8 (Type R)
Surface Mount
Wettable Flank
8-PowerTDFN
8 A
222 mOhm
384 pF
Diodes Inc
DMN10H220LVT-7
2.5 V
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
Surface Mount
SOT-23-6 Thin
TSOT-23-6
1.87 A
220 mOhm
4.5 V
10 V
N-Channel
16 V
401 pF
1.67 W
8.3 nC
Diodes Inc
DMN10H220LFVW-7
2.5 V
6.7 nC
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
PowerDI3333-8 (SWP) Type UX
Surface Mount
Wettable Flank
8-PowerVDFN
11 A
222 mOhm
360 pF
4.5 V
10 V
N-Channel
20 V
2.4 W
41 W
Diodes Inc
DMN10H220L-7
2.5 V
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
SOT-23-3
Surface Mount
SC-59
SOT-23-3
TO-236-3
1.4 A
220 mOhm
4.5 V
10 V
N-Channel
16 V
401 pF
1.3 W
8.3 nC
Diodes Inc
DMN10H099SFG-13
3 V
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
POWERDI3333-8
Surface Mount
8-PowerVDFN
4.2 A
80 mOhm
6 V
10 V
N-Channel
20 V
1172 pF
980 mW
Diodes Inc
DMN10H170SVTQ-13
3 V
9.7 nC
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
Surface Mount
SOT-23-6 Thin
TSOT-23-6
2.6 A
160 mOhm
1167 pF
4.5 V
10 V
N-Channel
20 V
1.2 W
Diodes Inc
DMN10H220LQ-13
2.5 V
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
SOT-23-3
Surface Mount
SC-59
SOT-23-3
TO-236-3
1.6 A
220 mOhm
4.5 V
10 V
N-Channel
16 V
401 pF
1.3 W
8.3 nC
Diodes Inc
DMN10H120SFG-13
3 V
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
POWERDI3333-8
Surface Mount
8-PowerVDFN
3.8 A
110 mOhm
549 pF
6 V
10 V
N-Channel
20 V
1 W
10.6 nC
Diodes Inc
DMN10H220LVT-13
2.5 V
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
Surface Mount
SOT-23-6 Thin
TSOT-23-6
1.87 A
220 mOhm
4.5 V
10 V
N-Channel
16 V
401 pF
1.67 W
8.3 nC
Diodes Inc
DMN10H170SFDE-13
3 V
9.7 nC
100 V
-55 °C
150 °C
MOSFET (Metal Oxide)
U-DFN2020-6 (Type E)
Surface Mount
6-PowerUDFN
2.9 A
160 mOhm
1167 pF
4.5 V
10 V
N-Channel
20 V
660 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.22
5000$ 0.20
7500$ 0.19
12500$ 0.18
17500$ 0.17

Description

General part information

DMN10H220LFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.