C3D03065E-TR

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Wolfspeed

DIODE SIL CARB 650V 11A TO2522

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Wolfspeed

DIODE SIL CARB 650V 11A TO2522

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	C3D03065E-TR	C3D03065 Series

Capacitance @ Vr, F	155 pF	155 pF
Current - Average Rectified (Io)	11 A	11 A
Current - Reverse Leakage @ Vr	50 µA	50 µA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-55 C	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	-	0 ns
Speed	200 mA, 500 ns	200 - 500 mA
Speed	-	No Recovery Time
Supplier Device Package	TO-252-2	TO-252-2
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V	1.8 V

DIODE SIL CARB 650V 11A TO2522

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Capacitance @ Vr, F	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed
Wolfspeed C3D03065E-TR	1.8 V	50 µA	11 A	DPAK (2 Leads + Tab), SC-63, TO-252-3	155 pF	200 mA, 500 ns	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	TO-252-2	Surface Mount	650 V
Wolfspeed C3D03065E	1.8 V	50 µA	11 A	DPAK (2 Leads + Tab), SC-63, TO-252-3	155 pF		175 ░C	-55 C	SiC (Silicon Carbide) Schottky	TO-252-2	Surface Mount	650 V	0 ns	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 11A Surface Mount TO-252-2

Technical documentation and resources