S85JR

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 85A DO5

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 85A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S85JR

Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	180 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Package / Case	Mounting Type	Technology	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor S85JR	600 V	Standard Recovery >500ns	200 mA	DO-203AB DO-5 Stud	Chassis Stud Mount	Reverse Polarity Standard	85 A	DO-5	1.1 V	-65 C	180 °C	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 85A Chassis, Stud Mount DO-5

Technical documentation and resources