BU508AW
ActiveSTMicroelectronics
HIGH VOLTAGE NPN POWER TRANSISTOR FOR STANDARD DEFINITION CRT DISPLAY
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BU508AW
ActiveSTMicroelectronics
HIGH VOLTAGE NPN POWER TRANSISTOR FOR STANDARD DEFINITION CRT DISPLAY
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | BU508AW | BU508AW Series |
|---|---|---|
| - | - | |
| Current - Collector (Ic) (Max) [Max] | 8 A | 8 A |
| Current - Collector Cutoff (Max) [Max] | 200 µA | 200 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 | 10 |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-247-3 | TO-247-3 |
| Supplier Device Package | TO-247-3 | TO-247-3 |
| Transistor Type | NPN | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 700 V | 700 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
BU508AW Series
High voltage NPN power transistor for standard definition CRT display
| Part | Operating Temperature | Transistor Type | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Mounting Type | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BU508AW | 150 °C | NPN | 8 A | 10 | TO-247-3 | Through Hole | TO-247-3 | 200 µA | 700 V | 1 V |
STMicroelectronics BU508AW | ||||||||||
STMicroelectronics BU508AW |
Description
General part information
BU508AW Series
The BU508AW is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.
Documents
Technical documentation and resources